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NAIST Application NoP04-35



TitleMETHOD OF FABRICATING THIN-FILM TRANSISTOR
INVENTORURAOKA, Yukiharu; (JP).FUYUKI, Takashi; (JP).KIRIMURA, Hiroya; (JP).
Pub.NoWO/2006/109565Pub Date19.10.2006
International Application NoPCT/JP2006/306307International Application Date 28.03.2006

abstractThe core metal of a protein such as ferritin is used as a nucleus for crystallizing a silicone thin film and then the thus crystallized film is employed in the channel part of a thin-film transistor. By aligning the protein on the surface of amorphous silicone and heating, the crystallinity is controlled. In the case of ferritin, the core diameter of the protein is 7 mm. That is, this protein is highly even in size (i.e., the metal content). Thus, the amount of the protein to be deposited on the amorphous silicone surface can be accurately controlled by controlling the protein core density. Furthermore, the type of the core metal can be altered by chemical reactions and the above method is applicable not only to amorphous silicone but also to amorphous films of various types such as germanium. Thus, the amount of nickel required in crystallization is controlled by using a protein. Moreover, the distribution density of the nickel core is controlled to thereby conduct crystallization at a desired crystal size.
National PhaseJP 05.10.2007 2007512753