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NAIST Application NoP11-06



TitleSiC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF
INVENTORHATAYAMA, Tomoaki; KOKETSU, Hidenori; TODOKORO, Yoshihiro
Pub.NoWO/2013/031172Pub Date2013/3/7
International Application NoPCT/JP2012/005363International Application Date 2012/8/27

abstractProvided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle 8° or lower of SiC is provided. The channel member is in the trench structure. At least 90% of the area of the channel member is a {03-38} surface or a surface that a {03-38} surface offset by an angle from -8° to 8° in the <1-100> direction. Specifically, the trench sidewalls are finished to {03-38} surfaces by applying a thermal process (thermal etching) to a trench with (0001) surfaces of SiC. Thermal etching is conducted in a chlorine atmosphere above 800°C with hydrogen gas or an inert gas such as a nitrogen gas as the carrier.
National Phase