Successful Fabrication of Highly Reliable IGZO TFT: Development of High Quality Gate Insulator with Next Generation Stability

Materials Science 2013/05/30

Prof. Y.Uraoka and Assoc. Prof. Y.Ishikawa
Laboratory of the Information Device Science,Graduate School of Materials Science

For next generation devices such as smart phones or tablet computers, high performance thin film transistors are indispensable. InGaZnO (A Compound semiconductor consisting of In, Ga, and Zn: also called IGZO) film is regarded as a promising material for transistor production. Prof. Y.Uraoka and Assoc. Prof. Y.Ishikawa of the Information Device Science Laboratory, Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST, President: N. Ogasawara) succeeded in the fabrication of a high quality gate insulator which greatly enhances the reliability of IGZO TFT's, through collaborative work with Nissin Electric Corporation.

This achievement will be presented at the IEEE/AMFPD International Conference, which will be held from July 2nd to the 5th in Kyoto.


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